Infineon IPB60R190C6ATMA1 N-channel MOSFET, 20.2 A, 650 V CoolMOS C6, 3-Pin D2PAK

IPB60R190C6ATMA1 Infineon  N-channel MOSFET, 20.2 A, 650 V CoolMOS C6, 3-Pin D2PAK
IPB60R190C6ATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
20.2 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
63 nC @ 10 V
Channel Type:
N
Length:
10.31mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
151 W
Series:
CoolMOS C6
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
190 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 20.2 A 650 V CoolMOS C6 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB60R190C6ATMA1. While 20.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.45mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 63 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.31mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 151 w maximum power dissipation. The product coolmos c6, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 190 mω maximum drain source resistance.

pdf icon
Datasheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.


FAQs

Yes. You can also search IPB60R190C6ATMA1 on website for other similar products.
We accept all major payment methods for all products including ET16793155. Please check your shopping cart at the time of order.
You can order Infineon brand products with IPB60R190C6ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPB60R190C6ATMA1 N-channel MOSFET, 20.2 A, 650 V CoolMOS C6, 3-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IPB60R190C6ATMA1 N-channel MOSFET, 20.2 A, 650 V CoolMOS C6, 3-Pin D2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793155 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793155.
Yes. We ship IPB60R190C6ATMA1 Internationally to many countries around the world.