Infineon IPB117N20NFDATMA1 N-channel MOSFET, 84 A, 200 V OptiMOS FD, 3-Pin D2PAK

IPB117N20NFDATMA1 Infineon  N-channel MOSFET, 84 A, 200 V OptiMOS FD, 3-Pin D2PAK
IPB117N20NFDATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
84 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+170 °C
Typical Gate Charge @ Vgs:
65 nC @ 10 V
Channel Type:
N
Length:
10.31mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 W
Series:
OptiMOS FD
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
11.7 mΩ
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This is N-channel MOSFET 84 A 200 V OptiMOS FD 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB117N20NFDATMA1. While 84 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.45mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +170 °c. With a typical gate charge at Vgs includes 65 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.31mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 300 w maximum power dissipation. The product optimos fd, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 11.7 mω maximum drain source resistance.

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IPB117N20NFD OptiMOS FD Power-Transistor 200 V(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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