Infineon IPB072N15N3GATMA1 N-channel MOSFET, 100 A, 150 V OptiMOS 3, 3-Pin D2PAK

IPB072N15N3GATMA1 Infineon  N-channel MOSFET, 100 A, 150 V OptiMOS 3, 3-Pin D2PAK
IPB072N15N3GATMA1
Infineon

Product Information

Maximum Drain Source Voltage:
150 V
Typical Gate Charge @ Vgs:
70 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
OptiMOS™ 3
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
4.57mm
Width:
9.45mm
Length:
10.31mm
Maximum Drain Source Resistance:
7.7 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
100 A
Minimum Gate Threshold Voltage:
2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
RoHs Compliant
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This is N-channel MOSFET 100 A 150 V OptiMOS 3 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB072N15N3GATMA1. It has a maximum of 150 v drain source voltage. With a typical gate charge at Vgs includes 70 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 300 w maximum power dissipation. The product optimos™ 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 4.57mm. Furthermore, the product is 9.45mm wide. Its accurate length is 10.31mm. It provides up to 7.7 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 100 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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