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This is N-channel MOSFET 120 A 80 V OptiMOS 3 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB025N08N3GATMA1. It has a maximum of 80 v drain source voltage. With a typical gate charge at Vgs includes 155 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 300 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.57mm. Furthermore, the product is 9.45mm wide. Its accurate length is 10.31mm. It provides up to 3.9 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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