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Infineon IPAW60R600CEXKSA1 N-channel MOSFET, 10.3 A, 600 V CoolMOS CE, 3+Tab-Pin TO-220FP

IPAW60R600CEXKSA1 Infineon N-channel MOSFET, 10.3 A, 600 V CoolMOS CE, 3+Tab-Pin TO-220FP
IPAW60R600CEXKSA1
Infineon

Product Information

Maximum Continuous Drain Current:
10.3 A
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220 FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20.5 nC @ 10 V
Channel Type:
N
Length:
11.3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
28 W
Series:
CoolMOS™ CE
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.27mm
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
0.9V
Maximum Drain Source Resistance:
1.4 Ω
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 10.3 A 600 V CoolMOS CE 3+Tab-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IPAW60R600CEXKSA1. While 10.3 a of maximum continuous drain current. Furthermore, the product is 4.9mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-220 fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 20.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 11.3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 28 w maximum power dissipation. The product coolmos™ ce, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 16.27mm. Whereas, the minimum operating temperature of the product is -40 °c. Its forward diode voltage is 0.9v . It provides up to 1.4 ω maximum drain source resistance.

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IPAW60R600CE MOSFET 600V CoolMOS CE Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

Yes. You can also search IPAW60R600CEXKSA1 on website for other similar products.
We accept all major payment methods for all products including ET16793092. Please check your shopping cart at the time of order.
You can order Infineon brand products with IPAW60R600CEXKSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPAW60R600CEXKSA1 N-channel MOSFET, 10.3 A, 600 V CoolMOS CE, 3+Tab-Pin TO-220FP. You can also check on our website or by contacting our customer support team for further order details on Infineon IPAW60R600CEXKSA1 N-channel MOSFET, 10.3 A, 600 V CoolMOS CE, 3+Tab-Pin TO-220FP.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793092 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793092.
Yes. We ship IPAW60R600CEXKSA1 Internationally to many countries around the world.
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