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Infineon IPA90R800C3XKSA1 N-channel MOSFET, 6.9 A, 900 V CoolMOS C3, 3-Pin TO-220FP

IPA90R800C3XKSA1 Infineon N-channel MOSFET, 6.9 A, 900 V CoolMOS C3, 3-Pin TO-220FP
Infineon

Product Information

Maximum Continuous Drain Current:
6.9 A
Transistor Material:
Si
Width:
4.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
42 nC @ 10 V
Channel Type:
N
Length:
10.65mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
33 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.15mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1.7 Ω
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 6.9 A 900 V CoolMOS C3 3-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IPA90R800C3XKSA1. While 6.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.85mm wide. The product offers single transistor configuration. It has a maximum of 900 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 42 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.65mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 33 w maximum power dissipation. The product coolmos c3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.15mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 1.7 ω maximum drain source resistance.

pdf icon
IPA90R800C3 CoolMOS C3 Power Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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FAQs

Yes. You can also search IPA90R800C3XKSA1 on website for other similar products.
We accept all major payment methods for all products including ET16793090. Please check your shopping cart at the time of order.
You can order Infineon brand products with IPA90R800C3XKSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPA90R800C3XKSA1 N-channel MOSFET, 6.9 A, 900 V CoolMOS C3, 3-Pin TO-220FP. You can also check on our website or by contacting our customer support team for further order details on Infineon IPA90R800C3XKSA1 N-channel MOSFET, 6.9 A, 900 V CoolMOS C3, 3-Pin TO-220FP.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793090 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793090.
Yes. We ship IPA90R800C3XKSA1 Internationally to many countries around the world.
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