Infineon IPA60R650CEXKSA1 N-channel MOSFET, 9.9 A, 650 V CoolMOS CE, 3-Pin TO-220FP

IPA60R650CEXKSA1 Infineon  N-channel MOSFET, 9.9 A, 650 V CoolMOS CE, 3-Pin TO-220FP
Infineon

Product Information

Maximum Continuous Drain Current:
9.9 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20.5 nC @ 10 V
Channel Type:
N
Length:
10.65mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
63 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.15mm
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
0.9V
Maximum Drain Source Resistance:
650 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 9.9 A 650 V CoolMOS CE 3-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IPA60R650CEXKSA1. While 9.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.9mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 20.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.65mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 63 w maximum power dissipation. The product coolmos ce, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.15mm. Whereas, the minimum operating temperature of the product is -40 °c. Its forward diode voltage is 0.9v . It provides up to 650 mω maximum drain source resistance.

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IPA60R650CE 600V CoolMOS CE Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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