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Infineon BSS816NWH6327XTSA1 N-channel MOSFET, 1.4 A, 20 V OptiMOS 2, 3-Pin SOT-323

BSS816NWH6327XTSA1 Infineon N-channel MOSFET, 1.4 A, 20 V OptiMOS 2, 3-Pin SOT-323
BSS816NWH6327XTSA1
Infineon

Product Information

Maximum Continuous Drain Current:
1.4 A
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.75V
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
0.6 nC @ 2.5 V
Channel Type:
N
Length:
2mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
OptiMOS™ 2
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.8mm
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
240 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 1.4 A 20 V OptiMOS 2 3-Pin SOT-323 manufactured by Infineon. The manufacturer part number is BSS816NWH6327XTSA1. While 1.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.25mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.75v of maximum gate threshold voltage. The package is a sort of sot-323. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.3v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 0.6 nc @ 2.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product optimos™ 2, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -40 °c. Its forward diode voltage is 1.1v . It provides up to 240 mω maximum drain source resistance.

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BSS816N OptiMOS-2 Small-Signal-Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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FAQs

Yes. We ship BSS816NWH6327XTSA1 Internationally to many countries around the world.
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You can order Infineon brand products with BSS816NWH6327XTSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon BSS816NWH6327XTSA1 N-channel MOSFET, 1.4 A, 20 V OptiMOS 2, 3-Pin SOT-323. You can also check on our website or by contacting our customer support team for further order details on Infineon BSS816NWH6327XTSA1 N-channel MOSFET, 1.4 A, 20 V OptiMOS 2, 3-Pin SOT-323.
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