Category:
Small Signal
Dimensions:
2.9 x 1.3 x 1mm
Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.3V
Maximum Drain Source Resistance:
7.5 Ω
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
37 pF @ 25 V
Length:
2.9mm
Pin Count:
3
Typical Turn-Off Delay Time:
6.1 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
360 mW
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Typical Turn-On Delay Time:
2.7 ns
Minimum Operating Temperature:
-55 °C
