Infineon BSS314PEH6327XTSA1 P-channel MOSFET, 1.5 A, 30 V OptiMOS P, 3-Pin SOT-23

BSS314PEH6327XTSA1 Infineon  P-channel MOSFET, 1.5 A, 30 V OptiMOS P, 3-Pin SOT-23
BSS314PEH6327XTSA1
Infineon

Product Information

Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Width:
0.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.9 nC @ 10 V
Channel Type:
P
Length:
2.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
OptiMOS P
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
230 mΩ
RoHs Compliant
Checking for live stock

This is P-channel MOSFET 1.5 A 30 V OptiMOS P 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is BSS314PEH6327XTSA1. While 1.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 0.1mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 2.9 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product optimos p, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.3mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 230 mω maximum drain source resistance.

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BSS314PE, OptiMOS-P3 Small-Signal-Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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