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This is P-channel MOSFET 190 mA 250 V SIPMOS 3-Pin SOT-89 manufactured by Infineon. The manufacturer part number is BSS192PH6327FTSA1. While 190 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.5mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of sot-89. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 4.9 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.5mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1 w maximum power dissipation. The product sipmos®, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 20 ω maximum drain source resistance.
For more information please check the datasheets.
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