Infineon BSP372NH6327XTSA1 N-channel MOSFET, 1.8 A, 100 V OptiMOS, 3+Tab-Pin SOT-223

BSP372NH6327XTSA1 Infineon  N-channel MOSFET, 1.8 A, 100 V OptiMOS, 3+Tab-Pin SOT-223
Infineon

Product Information

Maximum Continuous Drain Current:
1.8 A
Transistor Material:
Si
Width:
3.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
1.8V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.5 nC @ 10 V
Channel Type:
N
Length:
6.5mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.8 W
Series:
OptiMOS™
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.6mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
270 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 1.8 A 100 V OptiMOS 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is BSP372NH6327XTSA1. While 1.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.5mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 1.8v of maximum gate threshold voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 9.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.5mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.8 w maximum power dissipation. The product optimos™, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.6mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 270 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
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BSP372N OptiMOS N-ch MOSFET Transistor(Technical Reference)

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