Infineon BSP300H6327XUSA1 N-channel MOSFET Transistor, 190 mA, 800 V SIPMOS, 3+Tab-Pin SOT-223

BSP300H6327XUSA1 Infineon  N-channel MOSFET Transistor, 190 mA, 800 V SIPMOS, 3+Tab-Pin SOT-223
Infineon

Product Information

Maximum Drain Source Voltage:
800 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
1.6mm
Width:
3.5mm
Length:
6.5mm
Maximum Drain Source Resistance:
20 Ω
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
190 mA
Minimum Gate Threshold Voltage:
2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
RoHs Compliant
Checking for live stock

This is N-channel MOSFET Transistor 190 mA 800 V SIPMOS 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is BSP300H6327XUSA1. It has a maximum of 800 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.8 w maximum power dissipation. The product sipmos, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 1.6mm. Furthermore, the product is 3.5mm wide. Its accurate length is 6.5mm. It provides up to 20 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 190 ma of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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