Infineon BSP171PH6327XTSA1 P-channel MOSFET, 1.9 A, 60 V SIPMOS, 3+Tab-Pin SOT-223
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Series:
SIPMOS®
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
1.6mm
Width:
3.5mm
Length:
6.5mm
Maximum Drain Source Resistance:
300 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.9 A
Minimum Gate Threshold Voltage:
1V
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
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This is P-channel MOSFET 1.9 A 60 V SIPMOS 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is BSP171PH6327XTSA1. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 13 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.8 w maximum power dissipation. The product sipmos®, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 1.6mm. Furthermore, the product is 3.5mm wide. Its accurate length is 6.5mm. It provides up to 300 mω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.9 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins.
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