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This is N-channel MOSFET 120 mA 600 V Depletion SIPMOS 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is BSP135H6327XTSA1. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 3.7 nc @ 5 v. The product is available in surface mount configuration. The product carries depletion channel mode. Provides up to 1.8 w maximum power dissipation. The product sipmos®, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.6mm. Furthermore, the product is 3.5mm wide. Its accurate length is 6.5mm. It provides up to 45 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 120 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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