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This is P-channel MOSFET 3.4 A 60 V SIPMOS 8-Pin SOIC manufactured by Infineon. The manufacturer part number is BSO613SPVGHUMA1. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 20 nc. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. The product sipmos, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 130 mω maximum drain source resistance. The package is a sort of soic. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3.4 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.1v. Its forward diode voltage is 1.16v . The transistor is manufactured from highly durable si material. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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