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This is N/P-channel MOSFET 2 A 3 A 60 V SIPMOS 8-Pin DSO manufactured by Infineon. The manufacturer part number is BSO612CVGHUMA1. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 10.3 nc @ 10 v, 10.5 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product sipmos, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.45mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. It provides up to 120 mω, 300 mω maximum drain source resistance. The package is a sort of dso. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 2 a, 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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