Infineon BSL308PEH6327XTSA1 Dual P-channel MOSFET, 2 A, 30 V OptiMOS P, 6-Pin TSOP

BSL308PEH6327XTSA1 Infineon  Dual P-channel MOSFET, 2 A, 30 V OptiMOS P, 6-Pin TSOP
BSL308PEH6327XTSA1
Infineon

Product Information

Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Package Type:
TSOP-6
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5 nC @ 10 V
Channel Type:
P
Length:
2.9mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
OptiMOS P
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
130 mΩ
RoHs Compliant
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This is Dual P-channel MOSFET 2 A 30 V OptiMOS P 6-Pin TSOP manufactured by Infineon. The manufacturer part number is BSL308PEH6327XTSA1. While 2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.6mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of tsop-6. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product optimos p, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 130 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
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BSL308PE, OptiMOS P3 Small-Signal-Transistor(Technical Reference)

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