Infineon BSL306NH6327XTSA1 Dual N-channel MOSFET, 2.3 A, 30 V OptiMOS 2, 6-Pin TSOP

BSL306NH6327XTSA1 Infineon  Dual N-channel MOSFET, 2.3 A, 30 V OptiMOS 2, 6-Pin TSOP
Infineon

Product Information

Maximum Continuous Drain Current:
2.3 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2V
Package Type:
TSOP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.6 nC @ 5 V
Channel Type:
N
Length:
2.9mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
OptiMOS 2
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
93 mΩ
RoHs Compliant
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This is Dual N-channel MOSFET 2.3 A 30 V OptiMOS 2 6-Pin TSOP manufactured by Infineon. The manufacturer part number is BSL306NH6327XTSA1. While 2.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.6mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of tsop. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.6 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product optimos 2, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 93 mω maximum drain source resistance.

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BSL306N, OptiMOS2 Small-Signal-Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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