Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.6 V, 1.2V
Package Type:
TSOP-6
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.7 V, 1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.73 nC @ 4.5 V, 3 nC @ 5 V
Channel Type:
N, P
Length:
2.9mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
OptiMOS™
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
250 mΩ, 280 mΩ
