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This is Dual N-channel MOSFET 950 mA 20 V OptiMOS 2 6-Pin SOT-363 manufactured by Infineon. The manufacturer part number is BSD235NH6327XTSA1. While 950 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.25mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.2v of maximum gate threshold voltage. The package is a sort of sot-363. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.32 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product optimos™ 2, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 600 mω maximum drain source resistance.
For more information please check the datasheets.
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