Infineon BSC22DN20NS3GATMA1 N-channel MOSFET, 7 A, 200 V OptiMOS 3, 8-Pin TDSON

BSC22DN20NS3GATMA1 Infineon  N-channel MOSFET, 7 A, 200 V OptiMOS 3, 8-Pin TDSON
Infineon

Product Information

Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
6.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.2 nC @ 10 V
Channel Type:
N
Length:
5.35mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
34 W
Series:
OptiMOS™ 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
225 mΩ
RoHs Compliant
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This is N-channel MOSFET 7 A 200 V OptiMOS 3 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC22DN20NS3GATMA1. While 7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.35mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of tdson. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 4.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.35mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 34 w maximum power dissipation. The product optimos™ 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 225 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
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BSC22DN20NS3 G, OptiMOS3 Power-Transistor(Technical Reference)

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