Category:
Power MOSFET
Dimensions:
6.1 x 5.35 x 1.1mm
Maximum Continuous Drain Current:
63 A
Transistor Material:
Si
Width:
5.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Drain Source Resistance:
21.5 mΩ
Package Type:
TDSON
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
26 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1900 pF @ 50 V
Length:
6.1mm
Pin Count:
8
Forward Transconductance:
59S
Typical Turn-Off Delay Time:
28 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
114 W
Series:
OptiMOS 2
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
