Infineon BSC097N06NSATMA1 N-channel MOSFET, 46 A, 60 V OptiMOS, 8-Pin TDSON

BSC097N06NSATMA1 Infineon  N-channel MOSFET, 46 A, 60 V OptiMOS, 8-Pin TDSON
BSC097N06NSATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
46 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3.3V
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
N
Length:
5.35mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
36 W
Series:
OptiMOS™
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
14.6 mΩ
Checking for live stock

This is N-channel MOSFET 46 A 60 V OptiMOS 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC097N06NSATMA1. While 46 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.1mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 3.3v of maximum gate threshold voltage. The package is a sort of tdson. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.35mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 36 w maximum power dissipation. The product optimos™, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 14.6 mω maximum drain source resistance.

pdf icon
BSC097N06NS OptiMOS Power Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.


FAQs

Yes. You can also search BSC097N06NSATMA1 on website for other similar products.
We accept all major payment methods for all products including ET16792485. Please check your shopping cart at the time of order.
You can order Infineon brand products with BSC097N06NSATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon BSC097N06NSATMA1 N-channel MOSFET, 46 A, 60 V OptiMOS, 8-Pin TDSON. You can also check on our website or by contacting our customer support team for further order details on Infineon BSC097N06NSATMA1 N-channel MOSFET, 46 A, 60 V OptiMOS, 8-Pin TDSON.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16792485 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16792485.
Yes. We ship BSC097N06NSATMA1 Internationally to many countries around the world.