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Infineon BSC072N03LDGATMA1 Dual N-channel MOSFET, 20 A, 30 V OptiMOS 3, 8-Pin TDSON

BSC072N03LDGATMA1 Infineon Dual N-channel MOSFET, 20 A, 30 V OptiMOS 3, 8-Pin TDSON
BSC072N03LDGATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
6.15mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TDSON
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 4.5 V
Channel Type:
N
Length:
5.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
57 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
9.4 mΩ
RoHs Compliant
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This is Dual N-channel MOSFET 20 A 30 V OptiMOS 3 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC072N03LDGATMA1. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.15mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of tdson. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 5.15mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 57 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 9.4 mω maximum drain source resistance.

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BSC072N03LD G, OptiMOS3 Power-Transistors(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

Yes. You can also search BSC072N03LDGATMA1 on website for other similar products.
We accept all major payment methods for all products including ET16792473. Please check your shopping cart at the time of order.
You can order Infineon brand products with BSC072N03LDGATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon BSC072N03LDGATMA1 Dual N-channel MOSFET, 20 A, 30 V OptiMOS 3, 8-Pin TDSON. You can also check on our website or by contacting our customer support team for further order details on Infineon BSC072N03LDGATMA1 Dual N-channel MOSFET, 20 A, 30 V OptiMOS 3, 8-Pin TDSON.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16792473 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16792473.
Yes. We ship BSC072N03LDGATMA1 Internationally to many countries around the world.
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