Category:
Power MOSFET
Dimensions:
6.35 x 5.05 x 0.53mm
Maximum Continuous Drain Current:
83 A
Transistor Material:
Si
Width:
5.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Drain Source Resistance:
8.1 mΩ
Package Type:
WDSON
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
56 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5500 pF @ 50 V
Length:
6.35mm
Pin Count:
7
Forward Transconductance:
69S
Typical Turn-Off Delay Time:
25 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
78 W
Series:
OptiMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.53mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
1.2V
