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Infineon BG3130H6327XTSA1 N-channel MOSFET Tetrode, 25 mA, 8 V, 6-Pin SOT-363

BG3130H6327XTSA1 Infineon N-channel MOSFET Tetrode, 25 mA, 8 V, 6-Pin SOT-363
Infineon

Product Information

Maximum Drain Source Voltage:
8 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
200 mW
Maximum Gate Source Voltage:
+6 V
Height:
0.8mm
Width:
1.25mm
Length:
2mm
Minimum Gate Threshold Voltage:
0.6V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
1
Typical Power Gain:
31 dB
Maximum Continuous Drain Current:
25 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET Tetrode 25 mA 8 V 6-Pin SOT-363 manufactured by Infineon. The manufacturer part number is BG3130H6327XTSA1. It has a maximum of 8 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 200 mw maximum power dissipation. It features a maximum gate source voltage of +6 v. In addition, the height is 0.8mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. Whereas its minimum gate threshold voltage includes 0.6v. The package is a sort of sot-363 (sc-88). It consists of 1 elements per chip. It has about 31 db typical power gain . While 25 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration.

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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon BG3130H6327XTSA1 N-channel MOSFET Tetrode, 25 mA, 8 V, 6-Pin SOT-363. You can also check on our website or by contacting our customer support team for further order details on Infineon BG3130H6327XTSA1 N-channel MOSFET Tetrode, 25 mA, 8 V, 6-Pin SOT-363.
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