Infineon BF998E6327HTSA1 N-channel MOSFET Tetrode, 30 mA, 12 V, 4-Pin SOT-143

BF998E6327HTSA1 Infineon  N-channel MOSFET Tetrode, 30 mA, 12 V, 4-Pin SOT-143
BF998E6327HTSA1
Infineon

Product Information

Maximum Drain Source Voltage:
12 V
Maximum Continuous Drain Current:
30 mA
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Series:
BF998
Maximum Gate Source Voltage:
-2.5 V, -2 V
Maximum Gate Threshold Voltage:
2.5V
Height:
1.3mm
Width:
1mm
Length:
2.9mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
SOT-143
Number of Elements per Chip:
1
Typical Power Gain:
28 dB
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET Tetrode 30 mA 12 V 4-Pin SOT-143 manufactured by Infineon. The manufacturer part number is BF998E6327HTSA1. It has a maximum of 12 v drain source voltage. While 30 ma of maximum continuous drain current. The product is available in surface mount configuration. Provides up to 200 mw maximum power dissipation. The product bf998, is a highly preferred choice for users. It features a maximum gate source voltage of -2.5 v, -2 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 1.3mm. Furthermore, the product is 1mm wide. Its accurate length is 2.9mm. Whereas its minimum gate threshold voltage includes 0.8v. The package is a sort of sot-143. It consists of 1 elements per chip. It has about 28 db typical power gain . The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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BF998, Silicon N-Channel MOSFET Tetrode(Technical Reference)

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