Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 9.65mm
Maximum Continuous Drain Current:
120 A, 210 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
3 mΩ
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
120 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
6540 pF@ 50 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
55 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.65mm
Typical Turn-On Delay Time:
19 ns
Minimum Operating Temperature:
-55 °C
