Infineon 2N7002DWH6327XTSA1 Dual N-channel MOSFET, 300 mA, 60 V OptiMOS, 6-Pin SOT-363

2N7002DWH6327XTSA1 Infineon  Dual N-channel MOSFET, 300 mA, 60 V OptiMOS, 6-Pin SOT-363
Infineon

Product Information

Maximum Continuous Drain Current:
300 mA
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.4 nC @ 10 V
Channel Type:
N
Length:
2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
OptiMOS™
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4 Ω
RoHs Compliant
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This is Dual N-channel MOSFET 300 mA 60 V OptiMOS 6-Pin SOT-363 manufactured by Infineon. The manufacturer part number is 2N7002DWH6327XTSA1. While 300 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.25mm wide. The product offers isolated transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of sot-363. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.4 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product optimos™, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 4 ω maximum drain source resistance.

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2N7002DW OptiMOS Small-Signal-Transistor Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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