2SK3435-AZ N-Channel MOSFET, 80 A, 60 V, 3-Pin Renesas

2SK3435-AZ  N-Channel MOSFET, 80 A, 60 V, 3-Pin Renesas
Renesas Electronics

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
60 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Transistor Material:
Si
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
14 mΩ
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
80 A
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-Channel MOSFET 80 A 60 V 3-Pin Renesas manufactured by Renesas Electronics. The manufacturer part number is 2SK3435-AZ. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 60 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 1.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The transistor is manufactured from highly durable si material. The product carries 2.5v of maximum gate threshold voltage. It provides up to 14 mω maximum drain source resistance. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 80 a of maximum continuous drain current. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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Transistor,MOSFET(Technical Reference)

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