Renesas 2SK1339-E N-channel MOSFET, 3 A, 900 V, 3+Tab-Pin TO-3P

2SK1339-E Renesas  N-channel MOSFET, 3 A, 900 V, 3+Tab-Pin TO-3P
2SK1339-E
Renesas Electronics

Product Information

Maximum Drain Source Voltage:
900 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
80 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
19.9mm
Width:
4.8mm
Length:
15.6mm
Maximum Drain Source Resistance:
7 Ω
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Forward Diode Voltage:
0.9V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
RoHs Compliant
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This is Renesas N-channel MOSFET 3 A 900 V 3+Tab-Pin TO-3P manufactured by Renesas Electronics. The manufacturer part number is 2SK1339-E. It has a maximum of 900 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 80 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 19.9mm. Furthermore, the product is 4.8mm wide. Its accurate length is 15.6mm. It provides up to 7 ω maximum drain source resistance. The package is a sort of to-3p. It consists of 1 elements per chip. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 0.9v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration.

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2SK1339-E, Power MOSFET N-Channel 900V 3A TO-3P(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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