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This is Renesas N-channel MOSFET 3 A 900 V 3+Tab-Pin TO-3P manufactured by Renesas Electronics. The manufacturer part number is 2SK1339-E. It has a maximum of 900 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 80 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 19.9mm. Furthermore, the product is 4.8mm wide. Its accurate length is 15.6mm. It provides up to 7 ω maximum drain source resistance. The package is a sort of to-3p. It consists of 1 elements per chip. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 0.9v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration.
For more information please check the datasheets.
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