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This is Dual N-channel MOSFET 5.5 A 30 V UT6K3 8-Pin DFN manufactured by ROHM. The manufacturer part number is UT6K3TCR. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 4 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product ut6k3, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. The product carries 1.5v of maximum gate threshold voltage. In addition, the height is 0.6mm. Furthermore, the product is 2.1mm wide. Its accurate length is 2.1mm. It provides up to 63 mω maximum drain source resistance. The package is a sort of dfn. It consists of 2 elements per chip. While 5.5 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.5v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers dual base transistor configuration.
For more information please check the datasheets.
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