Category:
Power MOSFET
Dimensions:
3.1 x 1.7 x 0.8mm
Maximum Continuous Drain Current:
3 A
Width:
1.7mm
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
109 mΩ
Package Type:
TSST
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.5 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
140 pF @ 10 V
Length:
3.1mm
Pin Count:
8
Forward Transconductance:
2S
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Series:
TT8K11
Maximum Gate Source Voltage:
±20 V
Height:
0.8mm
Typical Turn-On Delay Time:
5 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
