ROHM SH8M13GZETB Dual N/P-channel MOSFET, 6 (N Channel) A, 7 (P Channel) A, 30 (N Channel) V, 30 (P Channel) V SH8M13GZE

SH8M13GZETB ROHM  Dual N/P-channel MOSFET, 6 (N Channel) A, 7 (P Channel) A, 30 (N Channel) V, 30 (P Channel) V SH8M13GZE
ROHM

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
5 nC @ 5 V (N Channel), 18 nC @ 5 V (P Channel)
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
SH8M13GZE
Maximum Gate Source Voltage:
P Channel) V, ±20 (N Channel
Maximum Gate Threshold Voltage:
P Channel)V, 2.5 (N Channel
Height:
1.6mm
Width:
4.05mm
Length:
5.2mm
Maximum Drain Source Resistance:
49 mΩ
Package Type:
SOP
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
6 (N Channel) A, 7 (P Channel) A
Minimum Gate Threshold Voltage:
P Channel)V, 1 (N Channel
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
RoHs Compliant
Checking for live stock

This is Dual N/P-channel MOSFET 6 (N Channel) A 7 (P Channel) A 30 (N Channel) V 30 (P Channel) V SH8M13GZE manufactured by ROHM. The manufacturer part number is SH8M13GZETB. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 5 nc @ 5 v (n channel), 18 nc @ 5 v (p channel). The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product sh8m13gze, is a highly preferred choice for users. It features a maximum gate source voltage of p channel) v, ±20 (n channel. The product carries p channel)v, 2.5 (n channel of maximum gate threshold voltage. In addition, the height is 1.6mm. Furthermore, the product is 4.05mm wide. Its accurate length is 5.2mm. It provides up to 49 mω maximum drain source resistance. The package is a sort of sop. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 6 (n channel) a, 7 (p channel) a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes p channel)v, 1 (n channel. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.

pdf icon
Datasheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.


FAQs

Yes. You can also search SH8M13GZETB on website for other similar products.
We accept all major payment methods for all products including ET16782633. Please check your shopping cart at the time of order.
You can order ROHM brand products with SH8M13GZETB directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM SH8M13GZETB Dual N/P-channel MOSFET, 6 (N Channel) A, 7 (P Channel) A, 30 (N Channel) V, 30 (P Channel) V SH8M13GZE. You can also check on our website or by contacting our customer support team for further order details on ROHM SH8M13GZETB Dual N/P-channel MOSFET, 6 (N Channel) A, 7 (P Channel) A, 30 (N Channel) V, 30 (P Channel) V SH8M13GZE.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16782633 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ROHM" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16782633.
Yes. We ship SH8M13GZETB Internationally to many countries around the world.