Deliver to
United Kingdom
This is N-channel SiC MOSFET 21 A 650 V 3-Pin TO-247N manufactured by ROHM. The manufacturer part number is SCT3120ALGC11. It has a maximum of 650 v drain source voltage. With a typical gate charge at Vgs includes 38 nc @ 18 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 103 w maximum power dissipation. It features a maximum gate source voltage of 22 v. The product carries 5.6v of maximum gate threshold voltage. In addition, the height is 21mm. Furthermore, the product is 5mm wide. Its accurate length is 16mm. Whereas its minimum gate threshold voltage includes 2.7v. The package is a sort of to-247n. It consists of 1 elements per chip. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It provides up to 158.4 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
Basket Total:
£ 0
