Category:
Power MOSFET
Dimensions:
15.95 x 13.9 x 5mm
Maximum Continuous Drain Current:
5.9 A
Transistor Material:
SiC
Width:
13.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1700 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-268
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.6V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
17 nC @ 18 V
Channel Type:
N
Typical Input Capacitance @ Vds:
275 pF @ 800 V
Length:
15.95mm
Pin Count:
2 + Tab
Forward Transconductance:
0.6S
Typical Turn-Off Delay Time:
41 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
57 W
Maximum Gate Source Voltage:
22 V
Height:
5mm
Typical Turn-On Delay Time:
19 ns
Maximum Drain Source Resistance:
1.088 Ω
