Category:
Power MOSFET
Dimensions:
3 x 1.8 x 0.95mm
Maximum Continuous Drain Current:
4.5 A
Width:
1.8mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
TSMT
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.6 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
540 pF @ 10 V
Length:
3mm
Pin Count:
6
Typical Turn-Off Delay Time:
45 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Maximum Gate Source Voltage:
±12 V
Height:
0.95mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
43 mΩ
