ROHM RRF015P03TL P-Channel MOSFET, 1.5 A, 30 V, 3-Pin TUMT

RRF015P03TL ROHM  P-Channel MOSFET, 1.5 A, 30 V, 3-Pin TUMT
ROHM

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
6.4 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
800 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
0.82mm
Width:
1.8mm
Length:
2.1mm
Maximum Drain Source Resistance:
230 mΩ
Package Type:
TUMT3
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is P-Channel MOSFET 1.5 A 30 V 3-Pin TUMT manufactured by ROHM. The manufacturer part number is RRF015P03TL. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 6.4 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 800 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 0.82mm. Furthermore, the product is 1.8mm wide. Its accurate length is 2.1mm. It provides up to 230 mω maximum drain source resistance. The package is a sort of tumt3. It consists of 1 elements per chip. While 1.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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RRF015P03 P-ch 30V 1.5A Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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