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This is Dual N-channel MOSFET 5.5 A 30 V 6-Pin TSMT manufactured by ROHM. The manufacturer part number is RQ6E055BNTCR. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 8.6 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.25 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 0.95mm. Furthermore, the product is 1.8mm wide. Its accurate length is 3mm. It provides up to 39 mω maximum drain source resistance. The package is a sort of tsmt. It consists of 2 elements per chip. While 5.5 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins.
For more information please check the datasheets.
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