Maximum Continuous Drain Current:
21 A
Width:
3.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
HSMT
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14.5 nC @ 4.5 V, 29 nC @ 10 V
Channel Type:
N
Length:
3.3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
16 W
Series:
RQ3E120BN
Maximum Gate Source Voltage:
±20 V
Height:
0.85mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
11.9 mΩ
