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ROHM RJ1G12BGNTLL N-channel MOSFET, 120 A, 40 V RJ1G12BGN, 2+Tab-Pin D2PAK

RJ1G12BGNTLL ROHM  N-channel MOSFET, 120 A, 40 V RJ1G12BGN, 2+Tab-Pin D2PAK
RJ1G12BGNTLL
RJ1G12BGNTLL
ET16782433
ET16782433
MOSFETs
ROHM

Product Information

Maximum Continuous Drain Current:
120 A
Width:
9.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
TO-263AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
165 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
2 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
178 W
Series:
RJ1G12BGN
Maximum Gate Source Voltage:
±20 V
Height:
4.7mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.08 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 120 A 40 V RJ1G12BGN 2+Tab-Pin D2PAK manufactured by ROHM. The manufacturer part number is RJ1G12BGNTLL. While 120 a of maximum continuous drain current. Furthermore, the product is 9.2mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of to-263ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 165 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 2 + tab pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 178 w maximum power dissipation. The product rj1g12bgn, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.7mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 2.08 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You can order ROHM brand products with RJ1G12BGNTLL directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM RJ1G12BGNTLL N-channel MOSFET, 120 A, 40 V RJ1G12BGN, 2+Tab-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on ROHM RJ1G12BGNTLL N-channel MOSFET, 120 A, 40 V RJ1G12BGN, 2+Tab-Pin D2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16782433 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ROHM" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16782433.
Yes. We ship RJ1G12BGNTLL Internationally to many countries around the world.