ROHM R6030KNZ1C9 N-channel MOSFET, 30 A, 600 V, 3-Pin TO-247

R6030KNZ1C9 ROHM  N-channel MOSFET, 30 A, 600 V, 3-Pin TO-247
ROHM

Product Information

Category:
Power MOSFET
Dimensions:
16.13 x 5.21 x 21.34mm
Maximum Continuous Drain Current:
30 A
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
56 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2350 pF @ 25 V
Length:
16.13mm
Pin Count:
3
Forward Transconductance:
20S
Typical Turn-Off Delay Time:
90 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
305 W
Maximum Gate Source Voltage:
±20 (Static) V, ±30 V
Height:
21.34mm
Typical Turn-On Delay Time:
36 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
240 mΩ
RoHs Compliant
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This is N-channel MOSFET 30 A 600 V 3-Pin TO-247 manufactured by ROHM. The manufacturer part number is R6030KNZ1C9. It is of power mosfet category . The given dimensions of the product include 16.13 x 5.21 x 21.34mm. While 30 a of maximum continuous drain current. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 56 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2350 pf @ 25 v . Its accurate length is 16.13mm. It contains 3 pins. The forward transconductance is 20s . Whereas, its typical turn-off delay time is about 90 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 305 w maximum power dissipation. It features a maximum gate source voltage of ±20 (static) v, ±30 v. In addition, the height is 21.34mm. In addition, it has a typical 36 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 240 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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