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This is Dual N/P-channel MOSFET 5 A 6 A 30 V QS8M13 8-Pin TSMT manufactured by ROHM. The manufacturer part number is QS8M13TCR. While 5 a, 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.4mm wide. The product offers dual base transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of tsmt. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5.5 nc @ 5 v, 10 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.5 w maximum power dissipation. The product qs8m13, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.8mm. Its forward diode voltage is 1.2v . It provides up to 39 mω, 63 mω maximum drain source resistance.
For more information please check the datasheets.
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