ROHM QH8MA3TCR Dual N/P-channel MOSFET, 5.5 (P Channel) A, 7 (N Channel) A, 30 (N Channel) V, 30 (P Channel) V QH8MA3

QH8MA3TCR ROHM  Dual N/P-channel MOSFET, 5.5 (P Channel) A, 7 (N Channel) A, 30 (N Channel) V, 30 (P Channel) V QH8MA3
ROHM

Product Information

Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N, P
Package Type:
TSMT8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is Dual N/P-channel MOSFET 5.5 (P Channel) A 7 (N Channel) A 30 (N Channel) V 30 (P Channel) V QH8MA3 manufactured by ROHM. The manufacturer part number is QH8MA3TCR. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of tsmt8. It consists of 1 elements per chip. While 7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - QH8MA3TCR(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of ROHM QH8MA3TCR Dual N/P-channel MOSFET, 5.5 (P Channel) A, 7 (N Channel) A, 30 (N Channel) V, 30 (P Channel) V QH8MA3. You can also check on our website or by contacting our customer support team for further order details on ROHM QH8MA3TCR Dual N/P-channel MOSFET, 5.5 (P Channel) A, 7 (N Channel) A, 30 (N Channel) V, 30 (P Channel) V QH8MA3.