Maximum Continuous Drain Current:
4.5 A, 3 A
Width:
2.5mm
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5 (N Channel) V, 2.5 (P Channel) V
Maximum Drain Source Resistance:
115 mΩ
Package Type:
TSMT-8
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1 (N Channel) V, 1 (P Channel) V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.4 nC @ 10 V
Channel Type:
N, P
Length:
3.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.5 W
Series:
QH8MA2
Maximum Gate Source Voltage:
±20 V
Height:
0.8mm
Forward Diode Voltage:
1.2V
