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This is Dual N-channel MOSFET 7 A 11 A 30 V HS8K11 8-Pin HSML3030L10 manufactured by ROHM. The manufacturer part number is HS8K11TB. While 7 a, 11 a of maximum continuous drain current. Furthermore, the product is 3.1mm wide. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of hsml3030l10. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 11.1 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2 w maximum power dissipation. The product hs8k11, is a highly preferred choice for users. It features a maximum gate source voltage of ±12 v, ±20 v. In addition, the height is 0.6mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 15.4 mω, 29.1 mω maximum drain source resistance.
For more information please check the datasheets.
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