Taiwan Semi TSM4NB60CI C0G N-channel MOSFET, 4 A, 600 V, 3-Pin ITO-220

TSM4NB60CI-C0G Taiwan Semi TSM4NB60CI C0G N-channel MOSFET, 4 A, 600 V, 3-Pin ITO-220
Taiwan Semiconductor

Product Information

Maximum Continuous Drain Current:
4 A
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
ITO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14.5 nC @ 10 V
Channel Type:
N
Length:
6.5mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Maximum Gate Source Voltage:
±30 V
Height:
2.28mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.13V
Maximum Drain Source Resistance:
2.5 Ω
RoHs Compliant
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This is Taiwan Semi N-channel MOSFET 4 A 600 V 3-Pin ITO-220 manufactured by Taiwan Semiconductor. The manufacturer part number is TSM4NB60CI C0G. While 4 a of maximum continuous drain current. Furthermore, the product is 6.1mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of ito-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.5mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 25 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 2.28mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.13v . It provides up to 2.5 ω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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