Microchip LND01K1-G N-channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23

LND01K1-G Microchip  N-channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23
Microchip

Product Information

Maximum Drain Source Voltage:
9 V
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
360 mW
Maximum Gate Source Voltage:
-12 V, +0.6 V
Height:
1.3mm
Width:
1.75mm
Length:
3.05mm
Maximum Drain Source Resistance:
1.4 Ω
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-25 °C
Maximum Continuous Drain Current:
330 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+125 °C
Pin Count:
5
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 330 mA 9 V Depletion 5-Pin SOT-23 manufactured by Microchip. The manufacturer part number is LND01K1-G. It has a maximum of 9 v drain source voltage. The product is available in surface mount configuration. The product carries depletion channel mode. Provides up to 360 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +0.6 v. In addition, the height is 1.3mm. Furthermore, the product is 1.75mm wide. Its accurate length is 3.05mm. It provides up to 1.4 ω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -25 °c. While 330 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +125 °c. It contains 5 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)

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