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Microchip DN2530N3-G N-channel MOSFET, 175 mA, 300 V Depletion, 3-Pin TO-92

DN2530N3-G Microchip  N-channel MOSFET, 175 mA, 300 V Depletion, 3-Pin TO-92
Microchip

Product Information

Maximum Drain Source Voltage:
300 V
Mounting Type:
Through Hole
Channel Mode:
Depletion
Maximum Power Dissipation:
740 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3.5V
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Maximum Drain Source Resistance:
12 Ω
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
175 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 175 mA 300 V Depletion 3-Pin TO-92 manufactured by Microchip. The manufacturer part number is DN2530N3-G. It has a maximum of 300 v drain source voltage. The product is available in through hole configuration. The product carries depletion channel mode. Provides up to 740 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 5.33mm. Furthermore, the product is 4.19mm wide. Its accurate length is 5.2mm. It provides up to 12 ω maximum drain source resistance. The package is a sort of to-92. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 175 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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DN2530, N-Channel Depletion-Mode Vertical DMOS FETs(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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